The invention provides semiconductor processing equipment, and the equipment comprises a reaction cavity and a heating device disposed in the reaction cavity. The heating device comprises heating lamp groups, a quartz cover located above the heating lamp groups, at least one thermal isolation part, and a control unit, wherein the number of the heating lamp groups is at least two, and are arranged to be corresponding to different regions a processed workpiece at intervals. The thermal isolation parts are used for isolating the heat generated by the heating lamp groups mutually. The control unit is used for adjusting power applied to all heating lamp groups during processing according to the distribution of pre-obtained film resistance values in different regions of the processed workpiece and the corresponding relation between the temperature of different regions of the processed workpiece and the film resistance values, thereby adjusting the distribution of the film resistance values of different regions of the processed workpiece. The equipment provided by the invention can improve the uniformity of the film resistances under the condition that the film thickness uniformity is not affected.