The invention provides a method of making a semiconductor device and a photoresist. The method includes forming a photoresist material over a substrate, the photoresist material having a polymer that includes a backbone having a segment and a linking group, the segment including a carbon chain and an ultraviolet (UV) curable group, the UV curable group coupled to the carbon chain and to the linking group; performing a first exposure process that breaks the backbone of the polymer via decoupling the linking group from the connected UV curable group of each segment; performing a second exposure process to form a patterned photoresist layer; and developing the patterned photoresist layer. Disclosed method of making a semiconductor device and a photoresist may provide more accurate patterning, sharper pattern resolutions, lowered rework or scrap rates, and/or other benefits.