An enhanced dual in line memory module (DIMM) connector includes internal conductive paths that provide access to signaling on standard conductive paths to an industry standard DIMM. The internal conductive paths are coupled in series or in parallel with the standard conductive paths through the connector. Interposer circuitry, such as control circuitry and or supplemental memory circuitry, may be incorporated on or within the connector. The interposer circuitry may include field effect transistor (FET) switching circuitry configured to selectively decouple a defective dynamic random memory (DRAM) on a DIMM from a conductive path to a memory controller and couple a substitute DRAM to the conductive paths in its place.