The present invention relates to a sensing circuit used for a non-volatile memory and the non-volatile memory. The sensing circuit is arranged in a page buffer with a latch and senses the data, and the latch saves the data temporarily when writing in or reading out data from a storage unit of the non-volatile memory. The sensing circuit comprises a first switch assembly and a stack gate type control assembly which are connected in series between a first signal line and the first terminal of the latch; a second switch assembly connected between the first switch assembly and the stack gate type control assembly. Before the first switch assembly is conducted to sense by a sensing enabling signal, the voltage of a floating gate of the stack gate type control assembly is set as the voltage value which is the sum of a limit value voltage of the floating gate of the stack gate type control assembly and a specified voltage, and then the data of the storage unit is sensed.