The present invention discloses a static random access memory and a manufacturing method thereof. The static random access memory includes a first inverter, a second inverter, a channel gate transistor, and a second channel gate transistor, and a method of manufacturing the static random access memory. The inverting device includes an upper pull-up transistor and a pull-down transistor. The second inverter includes a second pull-up transistor and a second pull-down transistor. The inverters and the second inverters are alternately coupled. The drain of the channel gate transistor is coupled to the output of the inverter, and the source of the channel gate transistor is coupled to the bit line. The drain of the second channel gate transistor is coupled to the output of the second inverter and the source of the second channel gate transistor is coupled to the second bit line. The upper pull-up transistor and the second pull-up transistor are mosaic transistors disposed on the element isolation structure.