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Invention Publication
CN107059135A 碳化硅基板的制造方法 有权

碳化硅基板的制造方法
Abstract:
本发明涉及一种制造碳化硅基板的方法，包括制备单结晶碳化硅的晶块(1)的步骤和通过切割晶块(1)获得基板的步骤。然后，在获得基板的步骤中，在如下方向上进行切割：该方向相对于晶块(1)的 方向或 方向所形成的角度在{0001}面上的正投影中是15°±5°。
Abstract(English):

A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot (1) of single crystal silicon carbide and obtaining a substrate by cutting the ingot (1). Then, in the step of obtaining a substrate, cutting proceeds in a direction in which an angle formed with respect to a <11-20> direction or a <1-100> direction of the ingot is 15 degrees +/- 5 degrees in an orthogonal projection on a {0001} plane.

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