The invention provides a semiconductor single crystal pulling apparatus that comprises a heater for heating a crucible that stores melt and keeping the crucible warm, and a wire for growing a semiconductor single crystal while pulling up the same from the melt. The semiconductor single crystal pulling apparatus is characterized by including: a remelting detection device which detects completion of remelting of a lower end of the semiconductor single crystal from the change in weight of the semiconductor single crystal when the lower end of the semiconductor single crystal is immersed into the melt with a wire to remelt the same; and a lowermost end detection device which, by applying a voltage between the crucible and the wire, detects the lowermost end of the semiconductor single crystal from the position through which electric current has stopped flowing between the semiconductor single crystal and the melt when winding up the semiconductor single crystal with a wire while applying a voltage between the semiconductor single crystal and the melt. As a result, effective remelting which does not require visual confirmation to determine completion of melting of the immersed crystal is made possible in the remelting of the semiconductor single crystal.