The invention discloses a method of preparing a surface plasmon vertical structure light emitting diode based on nano imprinting, which includes the following steps: (1) growing an epitaxial layer onthe surface of a sapphire substrate, preparing a first adhesive layer on the epitaxial layer, and preparing a second adhesive layer on the surface of a transfer substrate; (2) connecting the first adhesive layer and the second adhesive layer together, and separating the sapphire substrate from the epitaxial layer; (3) preparing a micro nano pattern on the surface of the epitaxial layer using the nano imprinting technology, transferring the micro nano pattern to the epitaxial layer to form micro nano holes, and preparing surface plasmon resonance coupling metal in the micro nano holes transferred to the epitaxial layer; and (4) etching the epitaxial layer to an N-type heavily doped layer through dry etching, preparing an N-type ohmic contact electrode on the N-type heavily doped layer, andpreparing a passivation protection layer on the surface of a chip, thus completing the preparation of a surface plasmon vertical structure light emitting diode.