Disclosed are a magnetron element (4) and a magnetron sputtering apparatus. The magnetron element (4) comprises a closed magnetic pole (1) and an open-circuit magnetic pole (2). The closed magnetic pole (1) surrounds the open-circuit magnetic pole (2). A magnetic field formed between the closed magnetic pole (1) and the open-circuit magnetic pole (2) can make the uniformity of a sputtering deposition thin film be less than 5%. The magnetron element (4) can be applicable to RF/DC PVD technology by means of providing the closed magnetic pole (1) and the open-circuit magnetic pole (2), and can enable a sputtering deposition thin film to satisfy a set uniformity requirement under the range of full process pressures by means of adjusting the shape and distribution of a plasma path (3) formed between the closed magnetic pole (1) and the open-circuit magnetic pole (2), so as to greatly improve the uniformity of the deposition thin film. The magnetron element (4) is widely applicable to magnetron sputtering systems and thin film deposition materials, and the magnetron element (4) can also improve the utilization ratio of a target (5).