The method of manufacturing a semiconductor device includes: forming a conductive film including a first metal-containing film and an anti-reflection film including a second metal-containing film which is laminated on the first metal-containing film, the second metal-containing film being different from the first metal-containing film and laminated on the first metal-containing film; patterning the conductive film; forming side wall protection films on side surfaces of the patterned conductive film; etching the anti-reflection film in the patterned conductive film, after formation of the sidewall protection films; forming a passivation film on the first metal-containing film and the side wall protection films; and forming, in the passivation film, an opening portion in which a part of a top surface of the first metal-containing film is exposed.