The invention discloses a semiconductor device, a manufacturing method thereof, an integrated circuit and electronic equipment. The semiconductor device comprises a substrate; an active region which comprises a first source/drain layer, a channel layer and a second source/drain layer, which are sequentially overlapped on the substrate; a gate stack which is formed around the periphery of the channel layer; an intermediate dielectric layer and a second conductive layer which surround the gate stack and the periphery of the active region; and a stress source which is arranged on the second conductive layer and/or the intermediate dielectric layer and is used for applying stress to the channel of the semiconductor device. The semiconductor device can improve the channel carrier mobility, andcan increase the conduction current, and the stress can increase the ferroelectric phase of a negative capacitance material, thereby reducing the subthreshold swing, increasing the conduction currentof the semiconductor device, and improving and optimizing the performance of the semiconductor device.