The invention discloses a nitride LED manufacturing method based on a metal mask substrate, and relates to a semiconductor light-emitting diode device. The method comprises the steps: forming a transition layer on a substrate; growing an LED epitaxial wafer on the transition layer by adopting the single epitaxial growth technology or the combination of various epitaxial growth technologies; depositing an ITO with the thickness of 10-200 nm on the LED epitaxial wafer through the deposition technology, and performing the annealing; and carrying out photoetching, etching, electrode growing, packaging and other processes on the LED epitaxial wafer on which the ITO is deposited, so as to prepare the front-mounted LED; or after the substrate is transferred, separating the epitaxial wafer from anoriginal substrate by adopting separation technologies such as laser stripping, and then carrying out processes such as photoetching, etching, electrode growing and packaging, so as to prepare an LEDwith the vertical structure. The method can improve the heat dissipation performance of the LED effectively, and facilitates the improvement of the reliability of an LED device. The metal is better in heat conduction performance, so high-reliability LED work is realized, and the service life of the LED is prolonged.