The invention provides a film bulk acoustic wave resonator having a non-c-axis preferred piezoelectric layer, which comprises a substrate, a first electrode, a piezoelectric layer and a second electrode which are sequentially arranged from bottom to top, and a reflection interface is arranged between the substrate and the first electrode; the middle part of the piezoelectric layer is located in anactive region, the piezoelectric layer comprises a c-axis preferred piezoelectric layer, the piezoelectric layer further comprises a non-c-axis preferred piezoelectric layer, and the c-axis preferredpiezoelectric layer is partially or wholly located on the inner side of the non-c-axis preferred piezoelectric layer; the c-axis preferred piezoelectric layer located inside is surrounded by the non-c-axis preferred piezoelectric layer and is located within the active region. The non-c-axis preferred piezoelectric layer is arranged on the piezoelectric layer, so that resonance of lateral waves orparasitic modes generated by the c-axis preferred piezoelectric layer can be restrained on the piezoelectric layer, the Q value of the resonator is increased, and parasitic resonance is reduced.