Invention Grant
EP1036403B1 PROTECTION OF ELECTRON-EMISSIVE ELEMENTS PRIOR TO REMOVING EXCESS EMITTER MATERIAL DURING FABRICATION OF ELECTRON-EMITTING DEVICE
有权
电子发射元件之前去除不必要的发光材料，电子发射器件的制备过程中保护
- Patent Title: PROTECTION OF ELECTRON-EMISSIVE ELEMENTS PRIOR TO REMOVING EXCESS EMITTER MATERIAL DURING FABRICATION OF ELECTRON-EMITTING DEVICE
- Patent Title (中): 电子发射元件之前去除不必要的发光材料，电子发射器件的制备过程中保护
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Application No.: EP98954016.6Application Date: 1998-10-27
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Publication No.: EP1036403B1Publication Date: 2006-11-29
- Inventor: KNALL, N., Johan
- Applicant: Candescent Technologies Corporation
- Applicant Address: 6320 San Ignacio Avenue San Jose, CA 95119 US
- Assignee: Candescent Technologies Corporation
- Current Assignee: Candescent Technologies Corporation
- Current Assignee Address: 6320 San Ignacio Avenue San Jose, CA 95119 US
- Agency: Ebner von Eschenbach, Jennifer
- Priority: US962525 19971031
- International Announcement: WO1999023682 19990514
- Main IPC: H01J9/02
- IPC: H01J9/02
Abstract:
In a partially finished electron-emitting device having electron-emissive elements (56A) formed at least partially with electrically non-insulating emitter material, electron-emissive element contamination that could result from passage of contaminant material through an excess layer (56B) of the emitter material is inhibited by forming a protective layer (58 or 70) over the excess emitter-material layer before performing additional processing operations on the electron-emitting device. Subsequent to these processing operations, material of the excess and protective layers overlying the electron-emissive elements is removed to expose the electron-emissive elements.
Public/Granted literature
- EP1036403A1 PROTECTION OF SPINDT TYPE CATHODES DURING FABRICATION OF ELECTRON-EMITTING DEVICE Public/Granted day:2000-09-20
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