Invention Patent
JP2012103679A Photoresist composition and method for forming photolithographic pattern
审中-公开
光刻胶组合物和形成光刻图案的方法
- Patent Title: Photoresist composition and method for forming photolithographic pattern
- Patent Title (中): 光刻胶组合物和形成光刻图案的方法
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Application No.: JP2011195533Application Date: 2011-09-08
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Publication No.: JP2012103679APublication Date: 2012-05-31
- Inventor: YANG CHOL-BAE , THOMAS CARDOLACCIA , SUN JIBIN , ARRIOLA DANIEL J , FRAZIER KEVIN A
- Applicant: Dow Global Technologies Llc , Rohm & Haas Electronic Materials Llc , ダウ グローバル テクノロジーズ エルエルシー , ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー.
- Assignee: Dow Global Technologies Llc,Rohm & Haas Electronic Materials Llc,ダウ グローバル テクノロジーズ エルエルシー,ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー.
- Current Assignee: Dow Global Technologies Llc,Rohm & Haas Electronic Materials Llc,ダウ グローバル テクノロジーズ エルエルシー,ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー．
- Priority: US38180510 2010-09-10
- Main IPC: G03F7/038
- IPC: G03F7/038 ; C08F20/26 ; G03F7/004 ; G03F7/039 ; H01L21/027
Abstract:
PROBLEM TO BE SOLVED: To provide a photoresist composition useful in forming a photolithographic pattern by a negative tone development process, a method for forming a photolithographic pattern, and a substrate coated with the photoresist composition.SOLUTION: The present invention relates to a photoresist composition and a photo lithography method allowing formation of a fine pattern by using a negative tone development process. The photoresist composition contains a copolymer formed from a monomer a part of which contains a certain acetal moiety. The preferred composition and method of the present invention provide reduction of thickness loss in photo lithography treatment and improvement of a pattern collapse margin. For the composition, the method and a coated substrate, special applicability has been found in manufacturing a semiconductor device.
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