Invention Grant
- Patent Title: Method for producing an organic semiconductor device
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Application No.: US13365673Application Date: 2012-02-03
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Publication No.: US10005879B2Publication Date: 2018-06-26
- Inventor: Subramanian Vaidyanathan , Marcel Kastler , Bertha Tan , Mi Zhou
- Applicant: Subramanian Vaidyanathan , Marcel Kastler , Bertha Tan , Mi Zhou
- Applicant Address: DE Ludwigshafen
- Assignee: BASF SE
- Current Assignee: BASF SE
- Current Assignee Address: DE Ludwigshafen
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C08G61/12 ; H01L51/05

Abstract:
A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer (120) an ambipolar charge carrier transport between the electrodes (114) is suppressed in favor of a unipolar charge carrier transport.
Public/Granted literature
- US20130200336A1 METHOD FOR PRODUCING AN ORGANIC SEMICONDUCTOR DEVICE Public/Granted day:2013-08-08
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