Invention Grant
- Patent Title: Removal composition for selectively removing hard mask and methods thereof
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Application No.: US15028573Application Date: 2014-10-09
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Publication No.: US10005991B2Publication Date: 2018-06-26
- Inventor: Hua Cui
- Applicant: E. I. DU PONT DE NEMOURS AND COMPANY , EKC TECHNOLOGY INC
- Applicant Address: US CA US DE Wilmington
- Assignee: EKC TECHNOLOGY INC,E I DU PONT DE NEMOURS AND COMPANY
- Current Assignee: EKC TECHNOLOGY INC,E I DU PONT DE NEMOURS AND COMPANY
- Current Assignee Address: US CA US DE Wilmington
- Agent Simon L. Xu
- International Application: PCT/US2014/059848 WO 20141009
- International Announcement: WO2015/054464 WO 20150416
- Main IPC: C11D7/32
- IPC: C11D7/32 ; C11D11/00 ; G03F7/42 ; H01L21/02 ; H01L21/3213 ; C23F1/18 ; C23F1/26 ; C23F1/28 ; C23F1/34 ; C23F1/38 ; C23F1/40 ; C11D3/39 ; C11D7/26 ; B08B3/08 ; C11D7/04 ; B08B3/10 ; C11D3/20 ; H01L21/768 ; H01L21/311
Abstract:
The present disclosure relates to a method for removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W from a semiconductor substrate. The method comprising contacting the semiconductor substrate with a removal composition. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.
Public/Granted literature
- US20160254182A1 Removal Composition for Selectively Removing Hard Mask and Methods Thereof Public/Granted day:2016-09-01
Information query
