Invention Grant
- Patent Title: Semiconductor pressure sensor device
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Application No.: US15531488Application Date: 2015-12-01
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Publication No.: US10006826B2Publication Date: 2018-06-26
- Inventor: Satoshi Tsubata , Hiroyuki Sawamura
- Applicant: Hokuriku Electric Industry Co., Ltd.
- Applicant Address: JP Toyama-shi
- Assignee: Hokuriku Electric Industry Co., Ltd.
- Current Assignee: Hokuriku Electric Industry Co., Ltd.
- Current Assignee Address: JP Toyama-shi
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2014-243174 20141201
- International Application: PCT/JP2015/083770 WO 20151201
- International Announcement: WO2016/088756 WO 20160609
- Main IPC: H01L29/84
- IPC: H01L29/84 ; G01L19/14 ; G01L9/00 ; B81B7/00

Abstract:
A semiconductor pressure sensor device in which the shape or the structure of a connector portion can be easily changed and which has high waterproof performance. A terminal housing and a second case are engaged with each other via an engagement structure. The terminal housing and a first case are fitted with each other via a fitting structure. Thus, the first case and the second case are fixed to each other via the terminal housing. The first case is fitted in the second case. Then, the terminal housing is fitted with the first case, and the terminal housing is engaged with the second case substantially at the same time. Through such simple process, an opening portion of the first case is covered and a connector portion configured to enable external terminals to be connected to ends, located on one side, of a plurality of lead terminals is formed.
Public/Granted literature
- US20170328802A1 SEMICONDUCTOR PRESSURE SENSOR DEVICE Public/Granted day:2017-11-16
Information query
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