Invention Grant
- Patent Title: Method of manufacturing semiconductor device, and probe card
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Application No.: US15794967Application Date: 2017-10-26
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Publication No.: US10006940B2Publication Date: 2018-06-26
- Inventor: Takashi Saito
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-031062 20150219
- Main IPC: G01R31/305
- IPC: G01R31/305 ; G01R1/067 ; G01R31/28 ; G01R27/08 ; G01R1/073 ; H01L29/93 ; H01L29/66

Abstract:
Reliability of an electrical test of a semiconductor wafer is improved. A method of manufacturing a semiconductor device includes a step of performing an electrical test of a semiconductor element by allowing contact portions (tips) of a force terminal (contact terminal) and a sense terminal (contact terminal) held by a probe card (first card) to come into contact with an electrode terminal of a semiconductor wafer. In the step of performing the electrical test, the contact portions of the force terminal and the sense terminal move in a direction away from each other after coming into contact with the first electrode terminal.
Public/Granted literature
- US20180045756A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PROBE CARD Public/Granted day:2018-02-15
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