Invention Grant
- Patent Title: Graphene pellicle for extreme ultraviolet lithography
-
Application No.: US15356386Application Date: 2016-11-18
-
Publication No.: US10007176B2Publication Date: 2018-06-26
- Inventor: Chih-Chiang Tu , Chun-Lang Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/62
- IPC: G03F1/62 ; G03F1/64 ; H01L21/033 ; C23C14/18 ; C23C16/26 ; C23C28/00 ; C23C14/16
Abstract:
A method includes depositing a first material layer over a substrate; and depositing a graphene layer over the first material layer, thereby forming a first assembly. The method further includes attaching a carrier to the graphene layer; removing the substrate from the first assembly; and removing the first material layer from the first assembly.
Public/Granted literature
- US20180059535A1 Graphene Pellicle For Extreme Ultraviolet Lithography Public/Granted day:2018-03-01
Information query
