Invention Grant
- Patent Title: Photoresist composition and method of manufacturing semiconductor device using the same
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Application No.: US15293756Application Date: 2016-10-14
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Publication No.: US10007182B2Publication Date: 2018-06-26
- Inventor: Jin Park , Hyun Woo Kim , Jin Kyu Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2016-0003186 20160111
- Main IPC: C03C15/00
- IPC: C03C15/00 ; G03F7/039 ; H01L21/027 ; H01L21/3065 ; H01L21/308 ; G03F7/20 ; G03F7/32 ; G03F7/16 ; G03F7/40 ; G03F7/004

Abstract:
Provided are a photoresist composition and a method of manufacturing a semiconductor device using the same. The method of manufacturing a semiconductor device comprises forming a mask layer and a photoresist layer on a substrate, forming a photoresist pattern by patterning the photoresist layer, forming a mask pattern by patterning the mask layer through the photoresist pattern and forming a pattern by etching the substrate using the mask pattern, wherein the formation of the photoresist layer comprises forming the photoresist layer, using a photoresist composition comprising a polymer which includes a protecting group that causes decarboxylation by radical.
Public/Granted literature
- US20170199456A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2017-07-13
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