Invention Grant
- Patent Title: Memory system and method of operating the memory system
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Application No.: US15001012Application Date: 2016-01-19
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Publication No.: US10007572B2Publication Date: 2018-06-26
- Inventor: Dong-Min Shin , Jun-Jin Kong , Beom-Kyu Shin , Eun-Chu Oh , Pil-Sang Yoon
- Applicant: Dong-Min Shin , Jun-Jin Kong , Beom-Kyu Shin , Eun-Chu Oh , Pil-Sang Yoon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2015-0011293 20150123
- Main IPC: G06F11/08
- IPC: G06F11/08 ; H03M13/11 ; G06F11/10 ; H03M13/25 ; H03M13/00

Abstract:
A method of operating a memory system includes receiving information data corresponding to a second program unit that is a part of a first program unit and a write request for the information data from a host; generating a codeword by performing error correction code (ECC) encoding on the received information data such that a partial parity bit corresponding to the information data among all parity bits of the codeword is updated; and providing a memory device with the generated codeword and a write command regarding the codeword.
Public/Granted literature
- US20160217030A1 MEMORY SYSTEM AND METHOD OF OPERATING THE MEMORY SYSTEM Public/Granted day:2016-07-28
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