Invention Grant
- Patent Title: Method for producing a power semiconductor module
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Application No.: US15424995Application Date: 2017-02-06
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Publication No.: US10008392B2Publication Date: 2018-06-26
- Inventor: Alexander Hoehn , Georg Borghoff
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014115847 20141030
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/52 ; H01L23/053 ; H01L23/08 ; H01L23/373 ; H01L23/498 ; H05K5/00

Abstract:
A power semiconductor module is produced by: providing an electrically conductive terminal block having a screw thread, a connecting conductor having first and second sections, a module housing, a circuit carrier having a dielectric insulation carrier and an upper metallization layer on an upper side of the insulation carrier, and a semiconductor component; fitting the semiconductor component on the circuit carrier; producing a firm and electrically conductive connection between the terminal block and the connecting conductor at the first section; producing a material-fit and electrically conductive connection between the circuit carrier or the semiconductor component and the connecting conductor at the second section; and arranging the terminal block and the circuit carrier fitted with the semiconductor component on the module housing so the semiconductor component is arranged in the module housing and the screw thread is accessible from an outer side of the module housing.
Public/Granted literature
- US20170148644A1 Method for Producing a Power Semiconductor Module Public/Granted day:2017-05-25
Information query
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