Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US15495494Application Date: 2017-04-24
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Publication No.: US10008485B2Publication Date: 2018-06-26
- Inventor: Jing-Cheng Lin , Po-Hao Tsai , Li-Hui Cheng , Porter Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L25/10
- IPC: H01L25/10 ; H01L25/00

Abstract:
A semiconductor device and method for providing an enhanced removal of heat from a semiconductor die within an integrated fan out package on package configuration is presented. In an embodiment a metal layer is formed on a backside of the semiconductor die, and the semiconductor die along and through vias are encapsulated. Portions of the metal layer are exposed and a thermal die is connected to remove heat from the semiconductor die.
Public/Granted literature
- US20170229434A1 Semiconductor Device and Method of Manufacture Public/Granted day:2017-08-10
Information query
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