Invention Grant
- Patent Title: Disc-shaped thyristor for a plurality of plated-through semiconductor components
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Application No.: US15121773Application Date: 2015-02-17
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Publication No.: US10008486B2Publication Date: 2018-06-26
- Inventor: Mario Schenk , Jens Przybilla , Reiner Barthelmess , Joerg Dorn
- Applicant: INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG , SIEMENS AKTIENGESELLSCHAFT
- Applicant Address: DE Warstein DE Munich
- Assignee: INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG,SIEMENS AKTIENGESELLSCHAFT
- Current Assignee: INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG,SIEMENS AKTIENGESELLSCHAFT
- Current Assignee Address: DE Warstein DE Munich
- Agent Norman B. Thot
- Priority: DE102014102493 20140226
- International Application: PCT/EP2015/053289 WO 20150217
- International Announcement: WO2015/128220 WO 20150903
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L25/11 ; H01L25/07 ; H01L23/40 ; H01L23/32 ; H01L23/367 ; H01L23/473 ; H01L23/00 ; H01L23/051

Abstract:
A disk cell for pressure contacting a plurality of semiconductor components via a clamping device to generate a clamping force. The disk cell includes a housing comprising at least one metallic pressure plate, a first semiconductor component arranged in the housing, and a second semiconductor component arranged in the housing. The first and second semiconductor components are different. The at least one metallic pressure plate reaches across and clamps the first and second semiconductor components, is substantially perpendicular to the clamping force, and is arranged so that the clamping force acts on the at least one metallic pressure plate to provide a local region of influence to clamp the first and second semiconductor components. The first semiconductor component is arranged below the local region of influence of the clamping force. The second semiconductor component is at least partially arranged outside the local region of influence of the clamping force.
Public/Granted literature
- US20170033091A1 IMPROVED DISC-SHAPED THYRISTOR FOR A PLURALITY OF PLATED-THROUGH SEMICONDUCTOR COMPONENTS Public/Granted day:2017-02-02
Information query
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