Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15581658Application Date: 2017-04-28
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Publication No.: US10008512B2Publication Date: 2018-06-26
- Inventor: Sang Hyon Kwak
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2015-0092019 20150629
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/28 ; H01L27/11524 ; H01L27/11556 ; H01L27/1157 ; H01L29/788
Abstract:
A semiconductor device may include pipe channel layer, and a pipe gate surrounding the pipe channel layer. The semiconductor device may include an oxidization layer formed between the pipe gate and the pipe channel layer. The semiconductor device may include a source side channel layer and a drain side channel layer extended from the pipe channel layer to protrude further than the oxidization layer.
Public/Granted literature
- US20170229477A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-08-10
Information query
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