Invention Grant
- Patent Title: Display device having reduced parasitic capacitance and cross-talk and method of manufacturing the same
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Application No.: US14843179Application Date: 2015-09-02
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Publication No.: US10008517B2Publication Date: 2018-06-26
- Inventor: Sunghoon Moon
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Knobble, Martens, Olson & Bear, LLP
- Priority: KR10-2015-0008260 20150116
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32

Abstract:
A display device and a method of manufacturing the same are disclosed. In one aspect, the display device includes a plurality of pixels, wherein each pixel includes a scan line extending in a first direction. Each pixel also includes a data line extending in a second direction crossing the first direction and a driving thin-film transistor (TFT) formed adjacent to the data line and including a gate electrode, a source electrode, and a drain electrode. The pixel also includes an interlayer insulating layer formed between the data line and the driving TFT, and a first through hole is formed in the interlayer insulating layer to be adjacent to the data line and the gate electrode. Each pixel also includes a driving voltage line formed adjacent to the data line and including a first portion formed in the first through hole and formed on the interlayer insulating layer.
Public/Granted literature
- US20160211273A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-07-21
Information query
IPC分类: