Invention Grant
- Patent Title: Image sensor and method for fabricating the same
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Application No.: US15238468Application Date: 2016-08-16
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Publication No.: US10008526B2Publication Date: 2018-06-26
- Inventor: Sung-Kun Park , Yun-Hui Yang , Pyong-Su Kwag , Dong-Hyun Woo , Young-Jun Kwon , Min-Ki Na , Cha-Young Lee , Ho-Ryeong Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0043261 20160408
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L27/146

Abstract:
An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.
Public/Granted literature
- US20170294468A1 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-10-12
Information query
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