Invention Grant
- Patent Title: Solid-state imaging device, method of manufacturing the same, and electronic apparatus
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Application No.: US15512131Application Date: 2015-09-17
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Publication No.: US10008529B2Publication Date: 2018-06-26
- Inventor: Takashi Nakashikiryo , Yoshiaki Kitano , Yuuji Nishimura , Kouichi Itabasi , Ryou Chiba , Yosuke Takita , Mitsuru Ishikawa , Toyomi Jinwaki , Yuichi Seki , Masaya Shimoji , Yoichi Ootsuka , Takafumi Nishi
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JP2014-203001 20141001
- International Application: PCT/JP2015/076414 WO 20150917
- International Announcement: WO2016/052220 WO 20160407
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
Public/Granted literature
- US20170278889A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS Public/Granted day:2017-09-28
Information query
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