Invention Grant
- Patent Title: Solid state devices having fine pitch structures
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Application No.: US15181551Application Date: 2016-06-14
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Publication No.: US10008542B2Publication Date: 2018-06-26
- Inventor: Daniel R. Shepard
- Applicant: HGST, Inc.
- Applicant Address: US CA San Jose
- Assignee: HGST, Inc.
- Current Assignee: HGST, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patterson & Sheridan, LLP
- Agent Steven Versteeg
- Main IPC: G03F7/26
- IPC: G03F7/26 ; H01L27/24 ; H01L21/311 ; H01L45/00 ; H01L21/033 ; H01L27/102
Abstract:
In various embodiments, a method for forming a memory array includes forming a plurality of rows and columns of hardmask material, etching holes in the one or more layers of insulating material using the combined masking properties of the rows of hardmask material and the columns of hardmask material, and forming memory cells in the holes. The corners of the holes can be rounded.
Public/Granted literature
- US20160293667A1 SOLID STATE DEVICES HAVING FINE PITCH STRUCTURES Public/Granted day:2016-10-06
Information query
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