Invention Grant
- Patent Title: Image sensors with organic photodiodes and methods for forming the same
-
Application No.: US15242220Application Date: 2016-08-19
-
Publication No.: US10008546B2Publication Date: 2018-06-26
- Inventor: Chin-Wei Liang , Chia-Shiung Tsai , Cheng-Yuan Tsai , Hsing-Lien Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L27/30 ; H01L27/146 ; H01L51/10
Abstract:
Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN-junction interfacial area, which improves the quantum efficiency (QE) of the photodiodes. The organic P-type material is applied in liquid form to fill the trenches. A mixture of P-type materials with different work function values and thickness can be used to meet the desired work function value for the photodiodes.
Public/Granted literature
- US20160358978A1 Image Sensors with Organic Photodiodes and Methods for Forming the Same Public/Granted day:2016-12-08
Information query
IPC分类:
