Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15259060Application Date: 2016-09-08
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Publication No.: US10008569B2Publication Date: 2018-06-26
- Inventor: Chih-Kai Hsu , Ssu-I Fu , Yu-Hsiang Hung , Wei-Chi Cheng , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW105125383A 20160810
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/423 ; H01L29/66 ; H01L29/78
Abstract:
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a gate structure is formed on the substrate, a recess is formed adjacent to the gate structure, a buffer layer is formed in the recess, and an epitaxial layer is formed on the buffer layer. Preferably, the buffer layer includes a crescent moon shape.
Public/Granted literature
- US20180047810A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2018-02-15
Information query
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