Invention Grant
- Patent Title: FET including an InGaAs channel and method of enhancing performance of the FET
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Application No.: US15346535Application Date: 2016-11-08
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Publication No.: US10008580B2Publication Date: 2018-06-26
- Inventor: Borna J. Obradovic , Titash Rakshit , Mark S. Rodder
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/088 ; H01L29/06 ; H01L29/20 ; H01L29/423 ; H01L29/78
Abstract:
According to an embodiment of the present invention, a method of manufacturing a FET device having a set BTBT leakage and a maximum VDD includes: determining an x value in InxGa1-xAs according to the BTBT leakage and the maximum VDD, and forming a channel utilizing InxGa1-xA, wherein x is not 0.53.
Public/Granted literature
- US20170271474A1 FET INCLUDING AN INGAAS CHANNEL AND METHOD OF ENHANCING PERFORMANCE OF THE FET Public/Granted day:2017-09-21
Information query
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