Invention Grant
- Patent Title: Atomic layer deposition for photovoltaic devices
-
Application No.: US14819007Application Date: 2015-08-05
-
Publication No.: US10008625B2Publication Date: 2018-06-26
- Inventor: Jeehwan Kim , David B. Mitzi , Byungha Shin , Teodor K. Todorov , Mark T. Winkler
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/0264 ; H01L31/0749 ; H01L31/18 ; H01L31/0216 ; H01L31/032 ; H01L31/072

Abstract:
A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
Public/Granted literature
- US20150340536A1 ATOMIC LAYER DEPOSITION FOR PHOTOVOLTAIC DEVICES Public/Granted day:2015-11-26
Information query
IPC分类: