Invention Grant
- Patent Title: Method for forming and processing antiperovskite material doped with aluminum material
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Application No.: US14060618Application Date: 2013-10-23
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Publication No.: US10008736B2Publication Date: 2018-06-26
- Inventor: Adrian Winoto , Anna Choi , Joseph Han , Will Hudson , Tim Holme , Cheng Chieh Chao
- Applicant: QuantumScape Corporation
- Applicant Address: US CA San Jose
- Assignee: QuantumScape Corporation
- Current Assignee: QuantumScape Corporation
- Current Assignee Address: US CA San Jose
- Agency: Squire Patton Boggs (US) LLP
- Main IPC: H01M10/0525
- IPC: H01M10/0525 ; H01M10/0562 ; C01G1/00 ; H01M10/054 ; H01M6/18
Abstract:
The present invention is related to formation and processing of antiperovskite material. In various embodiments, a thin film of aluminum doped antiperovskite is deposited on a substrate, which can be an electrolyte material of a lithium-based electrochemical storage device.
Public/Granted literature
- US20140113187A1 METHOD FOR FORMING AND PROCESSING ANTIPEROVSKITE MATERIAL DOPED WITH ALUMINUM MATERIAL Public/Granted day:2014-04-24
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