Invention Grant
- Patent Title: Semiconductor apparatus
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Application No.: US15364259Application Date: 2016-11-30
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Publication No.: US10008835B2Publication Date: 2018-06-26
- Inventor: Shigemi Miyazawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2016-003866 20160112
- Main IPC: H01T15/00
- IPC: H01T15/00 ; H01L29/739 ; H01L27/06

Abstract:
A semiconductor apparatus including a power semiconductor element connected between a first terminal on a high potential side and a second terminal on a low potential side, and controlled to be ON or OFF according to a gate potential thereof; a switch element connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and controlled to be ON or OFF according to a gate potential thereof; an ON potential supplying section connected between the first terminal and a gate of the switch element, that supplies an ON potential to the gate of the switch element; and an OFF potential supplying section connected between a reference potential and the gate of the switch element, that sets the gate potential of the switch element to an OFF potential in response to a predetermined cutoff condition being satisfied.
Public/Granted literature
- US20170201075A1 SEMICONDUCTOR APPARATUS Public/Granted day:2017-07-13
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