Invention Grant
- Patent Title: DC-DC converter and semiconductor device
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Application No.: US15176252Application Date: 2016-06-08
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Publication No.: US10008929B2Publication Date: 2018-06-26
- Inventor: Jun Koyama , Kei Takahashi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-159086 20130731
- Main IPC: H02M3/156
- IPC: H02M3/156 ; H01L27/12 ; H01L29/786 ; H03K7/08 ; G09G3/20 ; H02M3/335

Abstract:
A DC-DC converter with low power consumption and high power conversion efficiency is provided. The DC-DC converter includes a first transistor and a control circuit. The control circuit includes an operational amplifier generating a signal that controls switching of the first transistor, a bias circuit generating a bias potential supplied to the operational amplifier, and a holding circuit holding the bias potential. The holding circuit includes a second transistor and a capacitor to which the bias potential is supplied. The first transistor and the second transistor include a first oxide semiconductor film and a second oxide semiconductor film, respectively. The first oxide semiconductor film and the second oxide semiconductor film each contain In, M (M is Ga, Y, Zr, La, Ce, or Nd), and Zn. The atomic ratio of In to M in the first oxide semiconductor film is higher than that in the second oxide semiconductor film.
Public/Granted literature
- US20160285369A1 DC-DC CONVERTER AND SEMICONDUCTOR DEVICE Public/Granted day:2016-09-29
Information query
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