Invention Grant
- Patent Title: Remote plasma system and method
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Application No.: US14612131Application Date: 2015-02-02
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Publication No.: US10011532B2Publication Date: 2018-07-03
- Inventor: Fei-Fan Chen , Wen-Sheng Wu , Chien Kuo Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: C04B35/10
- IPC: C04B35/10 ; H05H1/46 ; H01J37/32 ; H01L21/02 ; C23C16/40 ; C23C16/452
Abstract:
A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.
Public/Granted literature
- US20150155185A1 Remote Plasma System and Method Public/Granted day:2015-06-04
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