Invention Grant
- Patent Title: Method for producing dry etching gas
-
Application No.: US14436248Application Date: 2013-11-12
-
Publication No.: US10011553B2Publication Date: 2018-07-03
- Inventor: Shingo Nakamura , Yuusuke Etou , Tatsuya Ohtsuka , Kanako Fukumoto , Masato Naitou
- Applicant: DAIKIN INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: DAIKIN INDUSTRIES, LTD.
- Current Assignee: DAIKIN INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2012-250311 20121114
- International Application: PCT/JP2013/080563 WO 20131112
- International Announcement: WO2014/077246 WO 20140522
- Main IPC: C07C51/58
- IPC: C07C51/58 ; C07C17/361 ; C07C17/383 ; C07C51/64 ; C07C17/38 ; C07C41/06

Abstract:
Provided is a method for producing fluoromethane and 3,3,3-trifluoro-2-(trifluoromethyl)propanoyl fluoride ((CF3)2CHCOF), which are useful as dry etching gases etc., safely and inexpensively with high purity.According to the method in which 1,1,3,3,3-pentafluoro-2-trifluoromethylpropyl methyl ether is pyrolyzed in a gas phase in the presence of a catalyst, the desired fluoromethane and 3,3,3-trifluoro-2-(trifluoromethyl)propanoyl fluoride can be obtained with high selectivity and high conversion of the starting material by a simple process in which a pyrolysis reaction is performed in a gas phase using the inexpensive starting material.
Public/Granted literature
- US20150299088A1 METHOD FOR PRODUCING DRY ETCHING GAS Public/Granted day:2015-10-22
Information query