Invention Grant
- Patent Title: Exposure method, exposure apparatus, and photomask
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Application No.: US13905529Application Date: 2013-05-30
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Publication No.: US10012912B2Publication Date: 2018-07-03
- Inventor: Kimie Hatakenaka
- Applicant: FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Yokohama
- Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2012-136121 20120615
- Main IPC: G03B27/52
- IPC: G03B27/52 ; G03F7/20

Abstract:
An exposure method includes: exposing, with a photomask including a shot pattern including chip patterns arranged therein, a plurality of the shot patterns onto a wafer as a first pattern; aligning the photomask on the wafer so that a first region of the shot pattern overlaps the first pattern, a second region other than the first region of the shot pattern is outside the first pattern, and chip patterns are continuously arranged in the first pattern and the second region; adjusting focus on the wafer, with the photomask having been aligned on the wafer; and shielding the first region from light and exposing a pattern of the second region onto the wafer as a second pattern.
Public/Granted literature
- US20130335719A1 EXPOSURE METHOD, EXPOSURE APPARATUS, AND PHOTOMASK Public/Granted day:2013-12-19
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