Invention Grant
- Patent Title: Pattern formation method
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Application No.: US15263734Application Date: 2016-09-13
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Publication No.: US10014182B2Publication Date: 2018-07-03
- Inventor: Yuriko Seino
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2016-036852 20160229
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/027 ; B81C1/00 ; H01L21/033 ; H01L21/311
Abstract:
According to one embodiment, a pattern formation method includes forming a base structure including first and second guide portions each including a pinning portion, and a neutral portion, forming a block copolymer film containing first and second polymers on the bass structure, performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer, forming third and fourth pattern portions formed of the second polymer, and forming a fifth pattern portion formed of the first and second polymers. The fifth pattern portion includes a plurality of first portions formed of the second polymer, and a second portion formed of the first polymer and provided on the neutral portion and the first portions.
Public/Granted literature
- US20170250071A1 PATTERN FORMATION METHOD Public/Granted day:2017-08-31
Information query
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