Invention Grant
- Patent Title: Method of manufacturing dielectric layers of semiconductor structure
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Application No.: US14813707Application Date: 2015-07-30
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Publication No.: US10014207B2Publication Date: 2018-07-03
- Inventor: Jia-You Tsai , Kung-Wei Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/3065 ; H01L21/02 ; H01L21/3115 ; H01L23/532 ; H01L21/768
Abstract:
A method of filling a dielectric trench includes forming two adjacent conductors on a substrate, forming a dielectric layer over a surface of the conductors and the substrate, removing a portion of the dielectric layer, treating a top surface of the dielectric layer with phosphorous plasma, and repeating the forming the dielectric layer, the removing the portion of the dielectric layer, and the treating the top surface of the dielectric layer in a multi cycle fashion. A narrowest width of the dielectric trench between the two adjacent conductors is smaller than about 30 nm.
Public/Granted literature
- US20150340276A1 METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2015-11-26
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