Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US15465891Application Date: 2017-03-22
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Publication No.: US10014226B2Publication Date: 2018-07-03
- Inventor: Arito Ogawa
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2016-068137 20160330
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/8238 ; H01L21/3215 ; H01L27/092 ; H01L21/8234 ; H01L21/3205

Abstract:
A process of forming a first mask on a first region of a metal film formed on a surface of a substrate, a process of modulating a work function of a first exposed region of the metal film, using plasma of a first process gas, a process of removing the first mask, a process of forming a second mask on a second region of the metal film, and a process of modulating the work function of a second exposed region of the metal film, using plasma of a second process gas are executed.
Public/Granted literature
- US20170287786A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-10-05
Information query
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