Invention Grant
- Patent Title: Interposer substrate and method of fabricating the same
-
Application No.: US14706101Application Date: 2015-05-07
-
Publication No.: US10014242B2Publication Date: 2018-07-03
- Inventor: Pao-Hung Chou , Shih-Ping Hsu
- Applicant: PHOENIX PIONEER TECHNOLOGY CO., LTD
- Applicant Address: TW Hsinchu County
- Assignee: PHOENIX PIONEER TECHNOLOGY CO., LTD.
- Current Assignee: PHOENIX PIONEER TECHNOLOGY CO., LTD.
- Current Assignee Address: TW Hsinchu County
- Agency: Amin, Turocy & Watson LLP
- Priority: CN201410726850 20141203
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K1/11 ; H05K3/40 ; H01L23/498 ; H01L21/48 ; H01L21/683 ; H01L23/13 ; H05K3/06

Abstract:
The invention provides an interposer substrate and a method of fabricating the same. The method includes: etching a carrier to form a recessed groove thereon; filling a dielectric material in the recessed groove to form a first dielectric material layer, or forming a patterned first dielectric material layer on the carrier; forming a first wiring layer, a first conductive block and a second dielectric material layer on the carrier and the first dielectric material layer sequentially, with the first wiring layer and the first conductive block embedded in the second dielectric material layer; and forming a second wiring layer and a second conductive block on the second dielectric material layer. A coreless interposer substrate having fine pitches is thus fabricated.
Public/Granted literature
- US20160163626A1 INTERPOSER SUBSTRATE AND METHOD OF FABRICATING THE SAME Public/Granted day:2016-06-09
Information query