Invention Grant
- Patent Title: Protrusion bump pads for bond-on-trace processing
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Application No.: US15215350Application Date: 2016-07-20
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Publication No.: US10014270B2Publication Date: 2018-07-03
- Inventor: Yu-Min Liang , Jiun Yi Wu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L23/498 ; H01L21/48 ; H05K3/40 ; H01L25/065 ; H01L25/00 ; H05K1/11 ; H05K3/46
Abstract:
An embodiment apparatus includes a dielectric layer, a conductive trace in the dielectric layer, and a bump pad. The conductive trace includes a first portion having an exposed top surface, wherein the exposed top surface is recessed from a top surface of the dielectric layer. Furthermore, the bump pad is disposed over and is electrically connected to a second portion of the conductive trace.
Public/Granted literature
- US20170018521A1 Protrusion Bump Pads for Bond-on-Trace Processing Public/Granted day:2017-01-19
Information query
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