Invention Grant
- Patent Title: Power semiconductor module for an inverter circuit and method of manufacturing the same
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Application No.: US15122590Application Date: 2015-03-04
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Publication No.: US10014284B2Publication Date: 2018-07-03
- Inventor: Kenji Hayashi , Akihiro Suzaki
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2014-041862 20140304
- International Application: PCT/JP2015/056375 WO 20150304
- International Announcement: WO2015/133527 WO 20150911
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L25/18 ; H01L25/07 ; H01L23/36 ; H01L29/739 ; H01L23/31
Abstract:
A semiconductor device according to the present invention includes a semiconductor chip, a conductive member for supporting the semiconductor chip, a joint material provided between the conductive member and the semiconductor chip, and a release groove formed on the surface of the conductive member and arranged away from the semiconductor chip with the one end and the other end of the release groove connected to the peripheral edges of the conductive member, respectively.
Public/Granted literature
- US20170069613A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-03-09
Information query
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