One aspect of the disclosure is directed to a method of forming an integrated circuit structure. The method may include: providing a set of fins over a semiconductor substrate, the set of fins including a plurality of working fins and a plurality of dummy fins, the plurality of dummy fins including a first subset of dummy fins within a pre-defined distance from any of the plurality of working fins, and a second subset of dummy fins beyond the pre-defined distance from any of the plurality of working fins; removing the first subset of dummy fins by an extreme ultraviolet (EUV) lithography technique; and removing at least a portion of the second subset of dummy fins.