Some embodiments include a method of forming a memory array. A wordline is formed to extend along a first direction, and along a rail of semiconductor material. After the wordline is formed, the rail is patterned into fins. Each fin has a first pedestal, a second pedestal, and a trough between the first and second pedestals. Charge-storage devices are formed to be electrically coupled with the first pedestals. Digit lines are formed to be electrically coupled with the second pedestals. Some embodiments include apparatuses containing finFETs.