A solid-state imaging device includes: a color filter layer which includes filters disposed above light receiving portions of a semiconductor substrate in one-to-one correspondence; and an infrared cut filter layer having an infrared cut wavelength at which transmittance is 50% or less and which ranges from 610 nm to 710 nm, wherein the filters include a visible light transmission filter which transmits visible light, and an infrared transmission filter having an infrared transmission wavelength at which transmittance is 50% or more and which ranges from 590 nm to 690 nm, and the infrared cut filter layer has an opening above one of the light receiving portions above which the infrared transmission filter is disposed, and is disposed above one of the light receiving portions above which the visible light transmission filter is disposed.