A semiconductor device includes a transistor cell area with active transistor cells including source zones electrically connected to a first load electrode. The source zones have a first conductivity type. An edge area surrounds the active transistor cell area and includes an edge construction that includes straight sections and a corner section connecting neighboring straight sections. A second dopant ratio between a mean concentration of dopants of a complementary second conductivity type and a mean concentration of dopants of the first conductivity type in the corner section exceeds a first dopant ratio between a mean concentration of dopants of the second conductivity type and a mean concentration of dopants of the first conductivity type in the straight sections by at least 0.2% in relation to the first dopant ratio.